The GOFORD 4435 is a semiconductor device utilizing advanced trench technology. It offers excellent Rds(on) and low gate charge, enabling operation with gate voltages as low as 4.5V. Its high power and current handling capability make it suitable for applications such as battery switches, load switches, and power management.
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVdss | Vgs=0V, Id=-250pA | -30 | - | - | V |
| Zero Gate Voltage Drain Current | Idss | Vds=-30V, Vgs=0V | - | - | 1 | pA |
| Gate-Body Leakage Current | Igs | Vds=120V, Vgs=0V | - | - | +100 | nA |
| Gate Threshold Voltage | Vgs(th) | Vds=Vgs, Id=-250pA | -1 | -1.6 | -2.5 | V |
| Drain-Source On-State Resistance | Rds(on) | Vgs=-10V, Id=-10A | - | 16 | 20 | m |
| Drain-Source On-State Resistance | Rds(on) | Vgs=-4.5V, Id=-5A | - | 20 | 33 | m |
| Forward Transconductance | gfs | Vds=-15V, Id=-10A | 10 | - | - | S |
| Input Capacitance | Ciss | Vds=15V, Vgs=0V, f=1.0MHz | - | 1600 | - | pF |
| Output Capacitance | Coss | Vds=15V, Vgs=0V, f=1.0MHz | - | 350 | - | pF |
| Reverse Transfer Capacitance | Crss | Vds=15V, Vgs=0V, f=1.0MHz | - | 300 | - | pF |
| Turn-on Delay Time | td(on) | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 10 | - | nS |
| Turn-on Rise Time | tr | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 15 | - | nS |
| Turn-Off Delay Time | td(off) | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 110 | - | nS |
| Turn-Off Fall Time | tf | Vds=-15V, Id=-1A, Vgs=10V, Rgen=6 | - | 70 | - | nS |
| Total Gate Charge | Qg | Vds=-15V, Id=-10A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | Vds=-15V, Id=-10A, Vgs=-10V | - | 55 | - | nC |
| Gate-Drain Charge | Qgd | Vds=-15V, Id=-10A, Vgs=-10V | - | 8 | - | nC |
| Diode Forward Voltage | Vsd | Vgs=0V, Is=-5A | - | - | -1.2 | V |
