The 10P10 is a high cell density trenched N-ch MOSFET designed for synchronous buck converter applications. It offers excellent Rds(on) and gate charge characteristics.
Synchronous buck converter applications.
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Voltage | -100 | V | |||
| Gate-Source Voltage | +20 | V | ||||
| ID | Continuous Drain Current | VGS @ -10V | -10 | A | ||
| ID | Continuous Drain Current | VGS @ -10V | 25 | A | ||
| ID | Continuous Drain Current | VGS @ -10V | -2 | A | ||
| ID | Pulsed Drain Current | -20 | A | |||
| EAS | Single Pulse Avalanche Energy | 48.1 | mJ | |||
| PD | Total Power Dissipation | 10 | W | |||
| PD | Total Power Dissipation | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| TJ | Operating Junction Temperature Range | -55 | to | 150 | C | |
| RthJA | Thermal Resistance Junction-Ambient | 72 | C/W | |||
| RthJC | Thermal Resistance Junction-Case | 1 | C/W |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| RDSON | 180 | m |
